METHOD OF PROGRAMMING NONVOLATILE MEMORY DEVICE

摘要

In method of programming a nonvolatile memory device including a plurality of multi-level cells that store multi-bit data according to example embodiments, a least significant bit (LSB) program operation is performed to program LSBs of the multi-bit data in the plurality of multi-level cells. A most significant bit (MSB) program operation is performed to program MSBs of the multi-bit data in the plurality of multi-level cells. To perform the MSB program, an MSB pre-program operation is performed on first multi-level cells, from among the plurality of multi-level cells, that are to be programmed to a highest target program state among a plurality of target program states, and an MSB main program operation is performed to program the plurality of multi-level cells to the plurality of target program states corresponding to the multi-bit data.

主权项

1. A method of programming a nonvolatile memory device including a plurality of first multi-level cells coupled to a first wordline and a plurality of second multi-level cells coupled to a second wordline adjacent to the first wordline, the method comprising:
performing a first least significant bit (LSB) program operation that programs LSBs of first 2-bit data in the plurality of first multi-level cells; performing a second LSB program operation that programs LSBs of second 2-bit data in the plurality of second multi-level cells; and performing, after the second LSB program operation is performed, a first most significant bit (MSB) program operation that programs MSBs of the first 2-bit data in the plurality of first multi-level cells, the first MSB program operation including a first MSB pre-program operation that pre-programs third multi-level cells from among the plurality of first multi-level cells that are to be programmed to a highest target program state among a plurality of target program states, and a first MSB main program operation that programs the plurality of first multi-level cells to the plurality of target program states corresponding to the first 2-bit data, the first MSB pre-program operation and the first MSB main program operation being performed in one sequence, and the first MSB pre-program operation comprising:
applying a program voltage to first bitlines coupled to the third multi-level cells;applying an inhibit voltage to second bitlines coupled to fourth multi-level cells other than the third multi-level cells from among the plurality of first multi-level cells, the fourth multi-level cells including ones of the plurality of first multi-level cells that are to be programmed to one of the plurality of target program states adjacent to the highest target program state, and the inhibit voltage being higher than the program voltage; andapplying a one-shot pulse to the first wordline to pre-program the third multi-level cells to an intermediate program state corresponding to the highest target program state, wherein a verify operation for the intermediate program state is not performed.