| 摘要 |
The present invention relates to an Electro-Optical (E-O) crystal elements, their applications and the processes for the preparation thereof. More specifically, the present invention relates to the E-O crystal elements (which can be made from doped or un-doped PMN-PT, PIN-PMN-PT or PZN-PT ferroelectric crystals) showing super-high linear E-O coefficient γc, e.g., transverse effective linear E-O coefficient γTc more than 1100 pm/V and longitudinal effective linear E-O coefficient γlc up to 527 pm/V, which results in a very low half-wavelength voltage Vlπ below 200V and VTπ below about 87V in a wide number of modulation, communication, laser, and industrial uses. |
