APPARATUS FOR PROCESSING SUBSTRATE

摘要

Provided is a semiconductor substrate processing apparatus capable of controlling the direction of process gas supplied to a substrate. The substrate processing apparatus comprises: a process chamber having a side wall and a cover for covering the side wall, and providing a space to perform a semiconductor process on a substrate; a first nozzle installed on the side wall of the process chamber, and spraying first process gas to the inside of the process chamber in a first direction; a second nozzle installed to be adjacent to the first nozzle on the side wall of the process chamber, and spraying second process gas to the inside of the process chamber in a second direction different from the first direction; and a control unit for controlling a flow rate of the first gas and the second gas sprayed from the first nozzle and the second nozzle.