| 摘要 |
PROBLEM TO BE SOLVED: To provide an SGT structure in which a fin-like semiconductor layer, a columnar semiconductor layer, a gate electrode and gate wiring are formed by two masks, and a gate last process is used, and an upper part of the columnar semiconductor layer is made function as an n-type semiconductor layer or a p-type semiconductor layer by a work function difference between a metal and a semiconductor by self-alignment, and to provide a method of manufacturing the same.SOLUTION: The method includes first to sixth steps. The first step forms a first insulating film around the fin-like semiconductor layer. The second step forms a columnar semiconductor layer, and a first dummy gate by first polysilicon. The third step forms a second dummy gate on sidewalls of the first dummy gate and the columnar semiconductor layer. The fourth step forms a sidewall consisting of a fifth insulating film and remaining in a sidewall shape around the second dummy gate, forms a second diffusion layer at an upper part of the fin-like semiconductor layer and a lower part of the columnar semiconductor layer, and forms a compound of a metal and a semiconductor on the second diffusion layer.SELECTED DRAWING: Figure 1 |
