| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat treatment method and a heat treatment device capable of selectively heating a resist film while suppressing the remarkable increase of cost.SOLUTION: A resist film is formed on the surface, and a substrate W in which the resist film is subjected to pattern exposure treatment and developing treatment is carried into a chamber 70 and is held to a holding plate 81. The surface of the substrate W held to the holding plate 81 is irradiated with flush light from a flush lamp FL. This flush light has a peak in the range of 200 to 300 nm in the wavelength at a spectral distribution. Further, in the flush light, the relative strength in the wavelength of 300 nm to the wavelength of 500 nm in a spectral distribution is 20% or higher. Since the resist film 5 absorbs ultraviolet rays, by irradiating the flush light in which the wavelength components in the ultraviolet region are largely contained is irradiated to selectively heat the resist film 5.SELECTED DRAWING: Figure 5 |
