| 发明名称 |
INTEGRATED MATCHING CIRCUIT FOR A HIGH FREQUENCY AMPLIFIER |
| 摘要 |
An integrated matching circuits for a high frequency amplifier transistor having an input terminal, an output terminal and a reference terminal. The reference terminal is coupled to a reference potential. The integrated matching circuit comprises an inductive element, and a capacitive element arranged in a series arrangement with the inductive element. The series arrangement has a first terminal end connected to the input terminal or to the output terminal and a second terminal end connected to the reference terminal. The first terminal end and the second terminal end are arranged at a same lateral side of the integrated matching circuit to obtain a geometry with the first terminal end adjacent to the input terminal or to the output terminal and the second terminal end adjacent to the reference terminal. |
| 申请公布号 |
US2016142025(A1) |
申请公布日期 |
2016.05.19 |
| 申请号 |
US201314898387 |
申请日期 |
2013.06.27 |
| 申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
VOLOKHINE YOURI |
| 分类号 |
H03F1/56;H03F3/193;H03F3/21;H03F1/02 |
主分类号 |
H03F1/56 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated matching circuit for a high frequency amplifier transistor having an input terminal, an output terminal and a reference terminal coupled to a reference potential, the integrated matching circuit comprising:
an inductive element; and a capacitive element arranged in a series arrangement with the inductive element, the series arrangement having a first terminal end connected to the input terminal or to the output terminal and a second terminal end connected to the reference terminal, the first terminal end and the second terminal end being arranged at a same lateral side of the integrated matching circuit to obtain a geometry with the first terminal end adjacent to the input terminal or to the output terminal and the second terminal end adjacent to the reference terminal. |
| 地址 |
Austin TX US |
