| 主权项 |
1: A thin film transistor, comprising:
a substrate having a main surface; a gate electrode provided on said main surface; a gate insulating layer provided on said main surface so as to cover the gate electrode; a source electrode and a drain electrode provided on the gate insulating layer so as to face each other and such that at least a portion of each overlaps the gate electrode through the gate insulating layer; and an organic semiconductor layer provided so as to cover a portion of the gate insulating layer located between the source electrode and the drain electrode, and so as to straddle the source electrode and the drain electrode at respective tops thereof, wherein the organic semiconductor layer includes a channel region formed so as to overlap the gate electrode between the source electrode and the drain electrode, wherein the source electrode and the drain electrode each include: a first conductive layer that increases adhesion with the gate insulating layer; a second conductive layer that is stacked on the first conductive layer and that has an electrical resistance lower than the first conductive layer; and a third conductive layer that is provided on a side of the first conductive layer and a side of the second conductive layer, both of which face the channel region, the third conductive layer making ohmic contact with the organic semiconductor layer, and wherein, in the source electrode and the drain electrode, the third conductive layer has a first contact surface that contacts the gate insulating layer, and a second contact surface that contacts a side face of the first conductive layer and a side face of the second conductive layer facing the channel region. |
