发明名称 THIN FILM TRANSISTOR AND A MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND A MANUFACTURING METHOD THEREOF, DISPLAY DEVICE
摘要 A thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device are disclosed. The manufacturing method of the array substrate includes depositing an amorphous silicon thin film layer on a base substrate; performing a patterning process on the amorphous silicon thin film layer, so as to form a pattern with multiple small pores at a surface of the amorphous silicon thin film layer. With this method, when a laser annealing treatment of amorphous silicon is performed, the molten silicon after melting fills the space of small pores at a surface of the amorphous silicon thin film layer firstly, thereby avoiding forming a protruded grain boundary that is produced because the excess volume of polysilicon is squeezed.
申请公布号 US2016141311(A1) 申请公布日期 2016.05.19
申请号 US201414435687 申请日期 2014.08.16
申请人 BOE TECHNOLOGY GROUP CO., LTD. ;BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. 发明人 XIE Zhenyu
分类号 H01L27/12;H01L29/786 主分类号 H01L27/12
代理机构 代理人
主权项 1. A manufacturing method of an array substrate, comprising depositing an amorphous silicon thin film layer on a base substrate; and performing a patterning process on the amorphous silicon thin film layer, so as to form a pattern with multiple small pores at a surface of the amorphous silicon thin film layer.
地址 Beijing CN
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