发明名称 |
THIN FILM TRANSISTOR AND A MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND A MANUFACTURING METHOD THEREOF, DISPLAY DEVICE |
摘要 |
A thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device are disclosed. The manufacturing method of the array substrate includes depositing an amorphous silicon thin film layer on a base substrate; performing a patterning process on the amorphous silicon thin film layer, so as to form a pattern with multiple small pores at a surface of the amorphous silicon thin film layer. With this method, when a laser annealing treatment of amorphous silicon is performed, the molten silicon after melting fills the space of small pores at a surface of the amorphous silicon thin film layer firstly, thereby avoiding forming a protruded grain boundary that is produced because the excess volume of polysilicon is squeezed. |
申请公布号 |
US2016141311(A1) |
申请公布日期 |
2016.05.19 |
申请号 |
US201414435687 |
申请日期 |
2014.08.16 |
申请人 |
BOE TECHNOLOGY GROUP CO., LTD. ;BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. |
发明人 |
XIE Zhenyu |
分类号 |
H01L27/12;H01L29/786 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
1. A manufacturing method of an array substrate, comprising
depositing an amorphous silicon thin film layer on a base substrate; and performing a patterning process on the amorphous silicon thin film layer, so as to form a pattern with multiple small pores at a surface of the amorphous silicon thin film layer. |
地址 |
Beijing CN |