Ball Amount Process in the Manufacturing of Integrated Circuit

摘要

An integrated circuit structure includes a semiconductor substrate, a metal pad over the semiconductor substrate, a passivation layer including a portion over the metal pad, a polymer layer over the passivation layer, and a Post-Passivation Interconnect (PPI) over the polymer layer. The PPI is electrically connected to the metal pad. The PPI includes a PPI line have a first width, and a PPI pad having a second width greater than the first width. The PPI pad is connected to the PPI line. The PPI pad includes an inner portion having a first thickness, and an edge portion having a second thickness smaller than the first thickness.

主权项

1. A method comprising:
forming a passivation layer comprising a portion over a metal pad, wherein the metal pad is further overlying a semiconductor substrate; forming a polymer layer over the passivation layer; patterning the polymer layer to expose the metal pad; forming a Post-Passivation Interconnect (PPI) electrically connected to the metal pad, wherein the PPI comprises:
a PPI line having a first width; anda PPI pad having a second width greater than the first width, wherein the PPI pad is connected to the PPI line; performing an oxidation on the PPI to form a metal oxide layer on the PPI; applying a flux over the metal oxide layer; placing a solder region over and contacting the flux; and reflowing the solder region.