| 发明名称 |
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE |
| 摘要 |
According to various embodiments, a method for manufacturing a semiconductor device may include providing a semiconductor workpiece including a device region at a first side of the semiconductor workpiece, wherein a mechanical stability of the semiconductor workpiece is insufficient to resist at least one back end process without damage, and depositing at least one conductive layer over a second side of the semiconductor workpiece opposite the first side of the semiconductor workpiece, wherein the at least one conductive layer increases the mechanical stability of the semiconductor workpiece to be sufficient to resist the at least one back end process without damage. |
| 申请公布号 |
US2016141256(A1) |
申请公布日期 |
2016.05.19 |
| 申请号 |
US201615003820 |
申请日期 |
2016.01.22 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Fischer Thomas;Ahrens Carsten;Sojka Damian;Schmenn Andre |
| 分类号 |
H01L23/00;H01L21/288;H01L23/495;H01L21/78 |
主分类号 |
H01L23/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for manufacturing a semiconductor device, the method comprising:
providing a semiconductor workpiece comprising a device region at a first side of the semiconductor workpiece, wherein a mechanical stability of the semiconductor workpiece is insufficient to resist at least one back end process without damage; depositing at least one conductive layer over a second side of the semiconductor workpiece opposite the first side of the semiconductor workpiece, wherein the at least one conductive layer increases the mechanical stability of the semiconductor workpiece to be sufficient to resist the at least one back end process without damage, wherein depositing the at least one conductive layer comprises a plating process. |
| 地址 |
Neubiberg DE |
