| 发明名称 |
METHOD FOR PROCESSING A SEMICONDUCTOR SUBSTRATE AND A METHOD FOR PROCESSING A SEMICONDUCTOR WAFER |
| 摘要 |
According to various embodiments, a method for processing a semiconductor substrate may include: covering a plurality of die regions of the semiconductor substrate with a metal; forming a plurality of dies from the semiconductor substrate, wherein each die of the plurality of dies is covered with the metal; and, subsequently, annealing the metal covering at least one die of the plurality of dies. |
| 申请公布号 |
US2016141208(A1) |
申请公布日期 |
2016.05.19 |
| 申请号 |
US201414541239 |
申请日期 |
2014.11.14 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
Joachim Hirschler;Michael Roesner;Markus Heinrici Juch;Gudrun Stranzl;Martin Mischitz;Martin Zgaga |
| 分类号 |
H01L21/78;H01L21/324;H01L23/29;H01L21/3213 |
主分类号 |
H01L21/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
covering a plurality of die regions of a semiconductor substrate with a metal to be annealed; forming a plurality of dies from the semiconductor substrate, wherein each die of the plurality of dies is covered with the metal, and, subsequently, annealing the metal covering at least one die of the plurality of dies. |
| 地址 |
Neubiberg DE |
