| 发明名称 |
Modeling Photoresist Shrinkage Effects In Lithography |
| 摘要 |
Aspects of the disclosed techniques relate to techniques for resist simulation in lithography. Local light power values are determined for a plurality of sample points in boundary regions of an aerial image of a feature to be printed on a resist coating, wherein each of the local light power values represents a light power value for an area surrounding one of the plurality of sample points. Based on the local light power values, a vertical shrinkage function is constructed. Resist contour data of the feature are then computed based at least on resist shrinkage effects modeled using the local light power values and the vertical shrinkage function. |
| 申请公布号 |
US2016140278(A1) |
申请公布日期 |
2016.05.19 |
| 申请号 |
US201615006020 |
申请日期 |
2016.01.25 |
| 申请人 |
Mentor Graphics Corporation |
发明人 |
Deng Yunfei;Granik Yuri;Medvedev Dmitry;Adam Konstantinos |
| 分类号 |
G06F17/50 |
主分类号 |
G06F17/50 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, executed by at least one processor of a computer, comprising:
determining local light power values for a plurality of sample points in boundary regions of an aerial image of a feature to be printed on a resist coating, wherein each of the local light power values represents a light power value for an area surrounding one of the plurality of sample points; constructing a vertical shrinkage function based on the local light power values; and computing resist contour data of the feature based at least on resist shrinkage effects modeled using the local light power values and the vertical shrinkage function. |
| 地址 |
Wilsonville OR US |
