MEMORY DEVICE INCLUDING POWER-UP CONTROL CIRCUIT, AND MEMORY SYSTEM HAVING THE SAME

摘要

A memory device may include a power-up control circuit and a first set of boost voltage generators. The power-up control circuit may be configured to consecutively activate a first set of power-up signals with a first delay time between each power-up signal of the first set of power-up signals in response to a rise of a power supply voltage and a reset signal having a first logic level at an initial stage of power-up. The first set of boost voltage generators may be configured to generate an internal boost voltage based on an external boost voltage and the first set of power-up signals. The first set of boost voltage generators may be configured to activate before the reset signal transitions from the first logic level to a second logic level opposite to the first logic level.

主权项

1. A memory device comprising:
a power-up control circuit configured to consecutively activate a first set of power-up signals with a first delay time between each power-up signal of the first set of power-up signals in response to a rise of a power supply voltage and a reset signal having a first logic level at an initial stage of power-up; and a first set of boost voltage generators configured to generate an internal boost voltage based on an external boost voltage and the first set of power-up signals, wherein the first set of boost voltage generators are configured to activate before the reset signal transitions from the first logic level to a second logic level opposite to the first logic level.