| 发明名称 |
LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A light-emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer and having a plurality of V-pits. The light-emitting device further includes a layer-quality improvement layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer and having a plurality of V-pits with substantially same size and shape as the plurality of V-pits of the active layer, wherein layer-quality improvement layer is a group III-V semiconductor layer including Al or In. Due to the improved layer quality, the luminescent quality of the light-emitting device is improved. |
| 申请公布号 |
US2016141455(A1) |
申请公布日期 |
2016.05.19 |
| 申请号 |
US201514940720 |
申请日期 |
2015.11.13 |
| 申请人 |
LIM Jin-young;Sakong Tan;Kim Byoung-kyun;Kim Jong-hak |
发明人 |
LIM Jin-young;Sakong Tan;Kim Byoung-kyun;Kim Jong-hak |
| 分类号 |
H01L33/24;H01L33/22;H01L33/00;H01L33/48;H01L33/52;H01L33/32;H01L33/06 |
主分类号 |
H01L33/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A light-emitting device comprising:
a first conductive type semiconductor layer; a second conductive type semiconductor layer; an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer and having a plurality of V-pits; and a layer-quality improvement layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer and having a plurality of V-pits of substantially same size and shape as the plurality of V-pits of the active layer, wherein the layer-quality improvement layer is a group III-V semiconductor layer comprising Al or In. |
| 地址 |
Gwacheon-si KR |
