Contacts For Highly Scaled Transistors

摘要

A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.

主权项

1. A semiconductor device, comprising:
a substrate; first and second source/drain (S/D) regions; a channel between the first and second S/D regions; a gate engaging the channel; and a contact feature connecting to the first S/D region, wherein: the contact feature includes a first contact layer and a second contact layer over the first contact layer; the first contact layer has a conformal cross-sectional profile; and the first contact layer is in contact with the first S/D region on at least two sides of the first S/D region or wraps around the first S/D region.