| 发明名称 |
METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE |
| 摘要 |
A method of manufacturing a nitride semiconductor device includes: forming a transistor having a gate electrode Schottky-joined to a nitride semiconductor layer; performing high-temperature annealing at a temperature of 200 to 360° C. for 8 to 240 hours on the transistor; and after the high-temperature annealing, performing RF burn-in by applying radiofrequency power to the transistor at a channel temperature of 180 to 360° C. |
| 申请公布号 |
US2016141385(A1) |
申请公布日期 |
2016.05.19 |
| 申请号 |
US201514747823 |
申请日期 |
2015.06.23 |
| 申请人 |
Mitsubishi Electric Corporation |
发明人 |
SASAKI Hajime |
| 分类号 |
H01L29/66;H01L29/205;H01L21/8252;H01L29/20;H01L21/324 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A method of manufacturing a nitride semiconductor device comprising:
forming a transistor having a gate electrode Schottky-joined to a nitride semiconductor layer; performing high-temperature annealing at a temperature of 200 to 360° C. for 8 to 240 hours on the transistor; and after the high-temperature annealing, performing RF burn-in by applying radiofrequency power to the transistor at a channel temperature of 180 to 360° C. |
| 地址 |
Tokyo JP |
