发明名称 |
Fabrication of Nanoscale Vacuum Grid and Electrode Structure With High Aspect Ratio Dielectric Spacers Between the Grid and Electrode |
摘要 |
Some embodiments of vacuum electronics call for a grid that is fabricated in close proximity to an electrode, where, for example, the grid and electrode are separated by nanometers or microns. Methods and apparatus for fabricating a nanoscale vacuum grid and electrode structure are described herein. |
申请公布号 |
US2016141382(A1) |
申请公布日期 |
2016.05.19 |
申请号 |
US201514939743 |
申请日期 |
2015.11.12 |
申请人 |
Elwha LLC |
发明人 |
Mankin Max N.;Pan Tony S. |
分类号 |
H01L29/45;H01L29/417;H01L21/3213;H01L29/167;H01L21/311;H01L21/02 |
主分类号 |
H01L29/45 |
代理机构 |
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代理人 |
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主权项 |
1. A method of fabricating a device having an electrode and a grid, the method comprising:
depositing a first material on a substrate to form the electrode, wherein the electrode forms an etch stop for an etchant; depositing a second material, different from the first material, on the electrode, wherein the second material includes a dielectric; depositing and patterning a third material on the second material, wherein the patterned third material forms the grid; and etching the second material with the etchant to pattern the second material such that a pattern of the second material is defined by a pattern of the grid. |
地址 |
Bellevue WA US |