发明名称 Fabrication of Nanoscale Vacuum Grid and Electrode Structure With High Aspect Ratio Dielectric Spacers Between the Grid and Electrode
摘要 Some embodiments of vacuum electronics call for a grid that is fabricated in close proximity to an electrode, where, for example, the grid and electrode are separated by nanometers or microns. Methods and apparatus for fabricating a nanoscale vacuum grid and electrode structure are described herein.
申请公布号 US2016141382(A1) 申请公布日期 2016.05.19
申请号 US201514939743 申请日期 2015.11.12
申请人 Elwha LLC 发明人 Mankin Max N.;Pan Tony S.
分类号 H01L29/45;H01L29/417;H01L21/3213;H01L29/167;H01L21/311;H01L21/02 主分类号 H01L29/45
代理机构 代理人
主权项 1. A method of fabricating a device having an electrode and a grid, the method comprising: depositing a first material on a substrate to form the electrode, wherein the electrode forms an etch stop for an etchant; depositing a second material, different from the first material, on the electrode, wherein the second material includes a dielectric; depositing and patterning a third material on the second material, wherein the patterned third material forms the grid; and etching the second material with the etchant to pattern the second material such that a pattern of the second material is defined by a pattern of the grid.
地址 Bellevue WA US