发明名称 |
IMPROVED METHOD FOR PATTERNING A THIN FILM |
摘要 |
The invention relates to a method for producing at least one pattern in a film resting on a substrate, including the steps of a) making amorphous at least one first block (131) of an upper film of crystalline material resting on a first amorphous supporting film, while the crystalline structure of a second block (132) of the upper film that adjoins and juxtaposes said first block (131) is preserved, b) partially recrystallising the first block (131) by using at least one side surface of the second block (132) that is in contact with the first block as an area for the start of a recrystallisation front, the partial recrystallisation being carried out so as to preserve a region (1311) of amorphous material in the first block, c) selectively etching the amorphous material of the upper film with respect to the crystalline material of the upper film so as to form at least one first pattern in the upper film. |
申请公布号 |
WO2016075083(A1) |
申请公布日期 |
2016.05.19 |
申请号 |
WO2015EP76078 |
申请日期 |
2015.11.09 |
申请人 |
COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIESALTERNATIVES;STMICROELECTRONICS SA |
发明人 |
REBOH, SHAY;GRENOUILLET, LAURENT;MORAND, YVES |
分类号 |
H01L21/308;H01L21/033 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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