发明名称 FILM DEPOSITION METHOD OF METAL FILM
摘要 PROBLEM TO BE SOLVED: To provide a film deposition method of a metal film, the method being able to deposit the metal film having a good adhesion over an entire surface of a resin substrate and having a good mass-productivity.SOLUTION: A film deposition method of a metal film according to the invention arranges a resin substrate W in a vacuum chamber B in which a metal target 2 is arranged, introduces sputtering gas to the vacuum chamber, forms plasma by applying a predetermined voltage to a target, and deposits metal films Mf1, Mf2 on at least one surface of the resin substrate by sputtering the target, the voltage being a pulse voltage, the pulse voltage having a frequency of less than 1 kHz, and a pulse width in a range of 1 μs - 1 ms.SELECTED DRAWING: Figure 3
申请公布号 JP2016084508(A) 申请公布日期 2016.05.19
申请号 JP20140217921 申请日期 2014.10.27
申请人 ULVAC JAPAN LTD 发明人 SUZUKI TOSHIHIRO;SAITO ATSUSHI;AKAMATSU YASUHIKO;TANI NORIAKI
分类号 C23C14/34;C23C14/20;H05K3/14 主分类号 C23C14/34
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