| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having a transistor with stable electric characteristics and having a good reliability.SOLUTION: In a method of manufacturing a semiconductor device, a gate electrode is formed on a substrate having an insulation surface, and a gate insulating film is formed on the gate electrode. An oxide semiconductor film is formed on the gate insulating film, and the oxide semiconductor film is irradiated with a microwave or a high-frequency electromagnetic wave. A source electrode and a drain electrode are formed on the oxide semiconductor film irradiated with the electromagnetic wave. An oxide insulating film contacted with a part of the oxide semiconductor film is formed on the gate insulating film, the oxide semiconductor film, the source electrode, and the drain electrode.SELECTED DRAWING: Figure 1 |
