| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
A method of manufacturing a semiconductor device is provided, the method including forming a first gate member on a semiconductor substrate through a gate insulating film, forming a spacer on the first gate member, flattening a surface of the spacer, forming a first gate by partially etching the first gate member using the spacer as a mask, forming a second gate member so as to cover the first gate and the spacer having the flattened surface, forming a first insulating film on a surface of the second gate member, and forming a second gate by causing the second gate member to retreat while removing the first insulating film by etching. |
| 申请公布号 |
US2016141407(A1) |
申请公布日期 |
2016.05.19 |
| 申请号 |
US201514937367 |
申请日期 |
2015.11.10 |
| 申请人 |
LAPIS SEMICONDUCTOR CO., LTD. |
发明人 |
CHIBA Akira |
| 分类号 |
H01L29/788;H01L29/40;H01L21/3105;H01L21/28;H01L21/3213;H01L29/66;H01L29/49 |
主分类号 |
H01L29/788 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device comprising:
forming a first gate member on a semiconductor substrate through a gate insulating film; forming a spacer on the first gate member; flattening a surface of the spacer; forming a first gate by partially etching the first gate member using the spacer as a mask; forming a second gate member so as to cover the first gate and the spacer having the flattened surface; forming a first insulating film on a surface of the second gate member; and forming a second gate by causing the second gate member to retreat while removing the first insulating film by etching. |
| 地址 |
KANAGAWA JP |
