SEMICONDUCTOR DEVICE AND METHOD OF MAKING

摘要

A semiconductor device is provided. The semiconductor device includes a channel region disposed between a source region and a drain region, a gate structure over the channel region, an interlayer dielectric (ILD) layer proximate the gate structure, an ILD stress layer proximate the top portion of gate structure and over the ILD layer. The gate structure includes a first sidewall, a second sidewall and a top portion. A first stress memorization region is also provided. The first stress memorization region is proximate the top portion of the gate structure. A method of making a semiconductor device is also provided.

主权项

1. A method of forming a semiconductor device, comprising:
etching a substrate to define a fin structure; forming a dummy gate structure over a channel region of the fin structure; forming an interlayer dielectric (ILD) layer over a source/drain region in contact with the channel region; implanting a dopant into a portion of the ILD layer to define an implanted ILD layer over a second portion of the ILD layer in which the dopant is not implanted; and annealing the implanted ILD layer to stress the implanted ILD layer, wherein the stress applies a compressive force on the dummy gate structure.