| 发明名称 |
BACKGROUND THRESHOLD VOLTAGE SHIFTING USING BASE AND DELTA THRESHOLD VOLTAGE SHIFT VALUES IN NON-VOLATILE MEMORY |
| 摘要 |
In one embodiment, a computer-implemented method includes determining, by a processor, after the writing of data to a non-volatile memory block, one or more delta threshold voltage shift (TVSΔ) values configured to track temporary changes with respect to changes in the underlying threshold voltage distributions due to retention and/or read disturb errors. One or more overall threshold voltage shift values is calculated for the data written to the non-volatile memory block, the one or more overall threshold voltage shift values being a function of the one or more TVSΔ values to be used when writing data to the non-volatile memory block. The one or more overall threshold voltage shift values are stored. |
| 申请公布号 |
US2016141048(A1) |
申请公布日期 |
2016.05.19 |
| 申请号 |
US201614987724 |
申请日期 |
2016.01.04 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Camp Charles J.;Fisher Timothy J.;Fry Aaron D.;Ioannou Nikolas;Koltsidas Ioannis;Papandreou Nikolaos;Parnell Thomas;Pletka Roman;Pozidis Charalampos;Tomic Sasa |
| 分类号 |
G11C16/34;G11C16/26;G11C16/14 |
主分类号 |
G11C16/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A computer-implemented method, comprising:
determining, by a processor, after writing data to a non-volatile memory block, one or more delta threshold voltage shift (TVSΔ) values configured to track temporary changes with respect to changes in the underlying threshold voltage distributions due to retention and/or read disturb errors; calculate one or more overall threshold voltage shift values for the data written to the non-volatile memory block, the one or more overall threshold voltage shift values being a function of the one or more TVSΔ values to be used when writing data to the non-volatile memory block; and storing the one or more overall threshold voltage shift values. |
| 地址 |
Armonk NY US |
