| 摘要 |
The invention relates to a method for producing polycrystalline silicon, comprising deposition of polycrystalline silicon, removal of at least one polycrystalline silicon rod pair from the reactor, elimination of graphite residues from the electrode-side ends of the at least two polycrystalline silicon rods of at least one polycrystalline silicon rod pair, comminution of the at least two polycrystalline silicon rods into rod pieces or fragments, characterized in that, before the removal of the at least one polycrystalline rod pair from the reactor, the at least one polycrystalline silicon rod pair is at least partially covered with a plastic bag made from plastic film which has a thickness greater than 150 pm, wherein the plastic bag comprises weights on the opening thereof. The invention relates to a polycrystalline silicon rod pair which has a rod diameter of 190 mm or greater, which is covered by a plastic bag made from a plastic film which has a thickness greater than 150 pm. |
