| 摘要 |
A double-diffusion metal-oxide semiconductor (DMOS) device (100) is disclosed. The DMOS device (100) includes a substrate, a source region on the substrate, a gate region on the substrate, and a drain region on the substrate. The DMOS device (100) also includes a source metal layer (101) positioned on the source region and a gate metal layer (102) positioned on the gate region. The source metal layer (101) has a first pattern, the gate metal layer (102) has a second pattern, and the first pattern is different from the second pattern such that the source metal layer (101) can be distinguished from the gate metal layer (102) by packaging equipment based on the different first pattern and second pattern. |
