| 摘要 |
Provided is a method for manufacturing graphene directly coming in contact with the surface of a substrate without using a metal catalyst on the substrate. The manufacturing method of low temperature substrate grown graphene comprises a step of growing graphene on a substrate without including a metal catalyst layer by supplying etching gas and carbon-containing gas and conducting low-pressure chemical vapor deposition (LPCVD) on the substrate. Moreover, the manufacturing method of low temperature substrate grown graphene may additionally comprise the following process before conducting the manufacturing method of substrate grown graphene: (1) heating a copper layer (metal layer) to around 700 to 800°C; and (2) removing oxide on the surface of the copper layer (metal layer) by supplying hydrogen having several tens of ssc, and applying hydrogen plasma before growth of graphene. |
