| 摘要 |
The present disclosure provides an electrostatic discharge protection structure and a fabrication method thereof. The structure includes: a substrate of a first type of conductivity, a well region of a second type of conductivity, a substrate contact region in the substrate and of the first type of conductivity, a well contact region in the well region and of the second type of conductivity, a substrate counter-doped region between the substrate contact region and the well contact region and of the second type of conductivity, a well counter-doped region between the substrate contact region and the well contact region and of the first type of conductivity, a communication region at a lateral junction between the substrate and the well region, a first isolation region between the substrate counter-doped region and the communication region, a second isolation region between the well counter-doped region and the communication region, an oxide layer having one end on the first isolation region and another end on the substrate, and a field plate structure on the oxide layer. A threshold voltage may be adjusted by the width and position of the field plate structure. |
