| 摘要 |
The time delay generator comprises a programmable resistor (11) made of chalcogenide based phase change material, and a comparator (13) having a reference electrical quantity that is stable with a variable representative electrical quantity of the resistor. The resistor is initialized to generate a delay such that it is equal to an initial value (R 0). The chalcogenide based phase change material is present in an amorphous phase. The comparator generates a signal (s) having a singularity that appears when the sign of two electrical quantities changes. The time delay generator comprises a programmable resistor (11) made of chalcogenide based phase change material, and a comparator (13) having a reference electrical quantity that is stable with a variable representative electrical quantity of the resistor. The resistor is initialized to generate a delay such that it is equal to an initial value (R 0). The chalcogenide based phase change material is present in an amorphous phase. The comparator generates a signal (s) having a singularity that appears when the sign of two electrical quantities changes. The electrical quantity of the resistor is representative of a reference resistor (R r e f e r e n c e) (12). A programming module (11) initializes the resistor by emission of an electrical impulse that is adapted to the resistor reaching the initial value. Characteristics of the electrical impulse for programming the resistor are determined using a correspondence table. The variable electrical quantity and the reference electrical quantity are intensities, when the comparator is a current comparator, and the variable electrical quantity and the reference electrical quantity are voltages, when the comparator is a voltage comparator. The initial value (R 0) allowing to obtain the delay is determined by an expression of R o= R r e f e r e n c ex (t 0/T)( ), where R is a resistance of the phase change material at instant (t), R ois resistance of phase change material at an initial instant (t 0) and is a constant depending on the type of chalcogenide material. |
