| 摘要 |
The present invention relates to a method for manufacturing an epitactic silicon layer made up of crystallites with a size no lower than 20 μm, including: providing a layer of crystallised silicon the surface of which, being inhomogeneous in terms of the size of the crystallites, is made up of large crystallites with a size no lower than 20 μm, and small crystallites of a smaller size; forming, on the surface of the inhomogeneous silicon layer, a layer of at least one non-nucleating material for the silicon, the thickness of which is adjusted such to cover the entire outer surface of the small crystallites, while leaving all or part of the outer surface of the large crystallites accessible; and carrying out epitaxial growth of a silicon layer on the surface of the assembly obtained at the end of step, under conditions that are suitable for forming the expected epitactic layer. |
