INTER-LEVEL CONNECTION FOR MULTI-LAYER STRUCTURES

摘要

Provided are a system for manufacturing a semiconductor device structure and a method thereof. An exemplary semiconductor device structure includes a first device layer, a second device layer and an inter-level connection structure. The first device layer includes a first conductive layer and a first dielectric layer formed on the first conductive layer. The first device layer is formed on a substrate. The second device layer includes a second conductive layer. The second device layer is formed on the first device layer. The inter-level connection structure includes one or more conductive materials and is configured to be electrically connected to the first conductive layer and the second conductive layer. The inter-level connection structure penetrates at least a part of the first dielectric layer. The first conductive layer is configured to be electrically connected to a first electrode structure of a first semiconductor device within the first device layer.