| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pretreatment method for measuring the minority carrier diffusion length of an n-type silicon wafer capable of measuring the diffusion length of minority carrier with high accuracy and reproducibility by obtaining a stabilized SPV signal. <P>SOLUTION: The pretreatment method for measuring the minority carrier diffusion length of an n-type silicon wafer having a resistivity of 0.1-3000 Ωcm by using a surface photoelectromotive force method includes a step for treating a wafer with an aqueous solution of hydrofluoric acid, a step for cleaning the wafer subjected to treatment with the aqueous solution of hydrofluoric acid with pure water, a step for treating the wafer thus cleaned with a heat treatment liquid containing a metal salt and hydrogen peroxide, a step for cleaning the wafer subjected to treatment with the heat treatment liquid with pure water, and a step for drying the wafer thus cleaned by placing the whole wafer in the inner wall space not closed of a container having a concave shape that is made of polypropylene or quartz and having a potential of 1-30 kV. <P>COPYRIGHT: (C)2013,JPO&INPIT |
