| 摘要 |
The present invention provides a gas barrier laminate film containing a substrate film having on at least one surface thereof plural layers of an inorganic thin film layer, from a first layer to an n-th layer (wherein n represents an integer of 1 or more) of the inorganic thin film layer on a side of the substrate film being formed by a non-plasma film forming method, and an (n+1)-th layer formed thereon in contact therewith being formed by a facing target sputtering method, and a method for producing a gas barrier laminate film containing a substrate film having on at least one surface thereof one or plural layers of an inorganic thin film layer, the method containing: forming from a first layer to an n-th layer of the inorganic thin film layer on a side of the substrate film by a non-plasma film forming method; and forming an (n+1) -th layer thereon in contact therewith by a facing target sputtering method, and thus provides a gas barrier laminate film with high gas barrier property and excellent productivity having a dense inorganic thin film layer that inflicts less damage to a substrate film, particularly to a resin film, on which the inorganic thin film layer is formed, and a method for producing the same. |
