发明名称 光半導体装置及びその製造方法
摘要 <P>PROBLEM TO BE SOLVED: To achieve an optical semiconductor device which can easily and reliably suppress a gain difference between TE-TM polarization to be not more than an intended value; reduce manufacturing variation among semiconductor substrates; and considerably improve yield in each production lot. <P>SOLUTION: An SOA (Semiconductor Optical Amplifier) includes: a semiconductor substrate 1; and an optical waveguide 11 formed on the semiconductor substrate 1 and including a single active layer 5 having a quantum dot 3 and optically connected. The optical waveguide 11 includes a first region 11a in which one of a TE mode polarization gain and a TM mode polarization gain is larger than the other, and a second region 11b in which the other is larger than the one. As a result, a difference between the TE mode polarization gain and the TM mode polarization gain is adjusted to be within a predetermined range as a whole. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP5919747(B2) 申请公布日期 2016.05.18
申请号 JP20110249972 申请日期 2011.11.15
申请人 富士通株式会社 发明人 安岡 奈美
分类号 H01S5/50;H01S5/34 主分类号 H01S5/50
代理机构 代理人
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