| 摘要 |
[Task] To obtain a dense PZT-based ferroelectric thin film having excellent crystal orientation in which cracking or a decrease in the film density does not occur even when a thick film having a film thickness per layer of 100 nm or more is coated, calcined, and fired using a CSD method. [Means for Resolution] When a PZT-based ferroelectric thin film is manufactured on a lower electrode by coating, calcining, and then firing so as to crystallize a PZT-based ferroelectric thin film-forming composition on the lower electrode of a substrate having the lower electrode in which the crystal plane is oriented in a (111) axis direction, the PZT-based ferroelectric thin film-forming composition is coated on the surface of the lower electrode using a CSD method, and calcination is slowly carried out on a formed sol film in a temperature pattern including a first holding step in which the temperature of the composition is increased frog a predetermined temperature such as room temperature using infrared rays and the composition is held at a temperature in a range of 200°C to 350°C and a second holding step in which the temperature of composition is increased from the holding temperature of the first holding step and is held at a temperature in a range of 350°C to 500°C higher than the holding temperature of the first holding step. |
