| 摘要 |
A semiconductor device (100) includes: a semiconductor element (6); a joined member (2) that is joined to the semiconductor element (6) and includes a nickel film (2a); and a joining layer (4) that joins the semiconductor element (6) with the joined member (2) and contains 2.0 wt% or higher of copper, wherein the joining layer (4) includes a solder portion (4a) and a Cu 6 Sn 5 portion (4b), base metal of the solder portion (4a) contains at least tin as a constituent element and contains elemental copper (Cu particles (20)) and the Cu 6 Sn 5 portion (4b) is in contact with the nickel film (2a). A method of manufacturing the semiconductor device (100) includes joining a semiconductor element (6) to a joined member (2), which includes a nickel film (2a), through a solder material whose base metal contains at least tin as a constituent element and contains elemental copper (copper particles (20)) in which a proportion of copper is 2.0 wt% or higher. The base metal of the solder material may be tin or a tin-copper solder, preferably a Sn-0.7Cu solder. |
