| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for cleaning a thin film forming device capable of reducing maintenance work and shortening downtime.SOLUTION: A method for cleaning a thin film forming device 1 comprises a heating step and a cleaning step. The heating step heats the inside of a reaction tube 2 to 800°C to 900°C. The cleaning step generates an active species containing an oxygen active species by supplying a cleaning gas containing an oxygen gas and a hydrogen gas into the reaction tube and heating the cleaning gas with the inside of the heated reaction tube maintained at 1.33 Pa to 2660 Pa, and removes a deposit attached to the inside of the thin film forming device 1 with the generated active species. |
