HIGH-VOLTAGE INTEGRATED DEVICE AND METHOD OF FABRICATING THE SAME

摘要

The objective of the present invention is to provide a high voltage integrated device where on-resistance properties can improve without degrading breakdown voltage properties. The high voltage integrated device comprises: a channel area arranged in an upper area of a substrate; a drift area adjacent to the channel area, arranged in the upper area of the substrate; a source area touching one side of the channel area, arranged at the opposite side of the drift area; trench insulation layers arranged at the drain area arranged at the upper part of the drift area and at the upper part of the drift area between the channel and drain areas; and gate insulation layers and gate electrodes extended towards the upper surface of the drift area and trench insulation layers and laminated one by one on the channel area. Additionally, the trench insulation layers have a double sloped side structure of which a first angle between a second line in parallel to a first line extended from the bottom of the trench insulation layers and an outer side surface is greater than a second angle between the first line and the outer side surface.