| 摘要 |
A photovoltaic device is provided having a semiconductor substrate (10), an i-type amorphous layer (12i) formed over a front surface of the semiconductor substrate (10), a p-type amorphous layer (12p) formed over the i-type amorphous layer (12i), an i-type amorphous layer (16i) formed over a back surface of the semiconductor substrate (10), and an n-type amorphous layer (16n) formed over the i-type amorphous layer (16i). The i-type amorphous layer (12i) and the i-type amorphous layer (16i) have oxygen concentration profiles in which concentrations are reduced in a step-shape from regions near interfaces with the semiconductor substrate (10) and along a thickness direction, and an oxygen concentration in the step-shape portion of the i-type amorphous layer (12i) is higher than an oxygen concentration in the step-shape portion of the i-type amorphous layer (16i). |
