发明名称 半導体レーザ装置
摘要 A semiconductor laser device includes: semiconductor laser arrays; collimating members; a condenser lens provided, in common, for collimated light beam arrays outputted from the respective collimating members, and including a light incident surface on which a light incident row pattern including light incident regions is formed through entering of the collimated light beam arrays; and an optical fiber. A condenser lens incident optical path length of at least one of the semiconductor laser arrays is different from that of any other one of the semiconductor laser arrays. A collimated light beam array derived from one of the semiconductor laser arrays that corresponds to the largest condenser lens incident optical path length is directed to a predetermined light incident region in the light incident surface. The predetermined light incident region is other than the outermost light incident region in the light incident row pattern.
申请公布号 JP5920254(B2) 申请公布日期 2016.05.18
申请号 JP20130049772 申请日期 2013.03.13
申请人 ウシオ電機株式会社 发明人 吉野 雅也;紺谷 亘
分类号 H01S5/022 主分类号 H01S5/022
代理机构 代理人
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