| 摘要 |
Provided are a thin film forming method capable of forming a thin film having good properties, and a thin film forming apparatus. According to the present invention, the thin film forming method comprises: a first process of supplying first source gas and second source gas to a reaction chamber; and a second process of stopping the supply of the first source gas, supplying the second source gas to the reaction chamber, and increasing pressure inside the reaction chamber higher compared to pressure in the first process. A thin film is formed in an object to be processed received inside the reaction chamber by alternately repeating the first and second processes several times. |
