| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition device and a film deposition method capable of separately adjusting a density and an injection speed of radical molecules or radical atoms generated from plasma.SOLUTION: A film deposition device generates plasma using gas in a film deposition space, and has an injector for injecting radical with a film component generated from the plasma to a film depositing substrate. The injector includes: a plasma actuator having a pair of electrodes, generating the plasma by applying a voltage between the pair of electrodes, and injecting the radical with the film deposition component generated from the plasma; and a plasma generation element having a pair of electrodes, generating the plasma by applying the voltage between the electrodes, and generating the radical with the film deposition component. The plasma actuator and the plasma generation element are provided in a vertical line in a vertical direction on a face of the film depositing substrate, so as to deposit a film by injecting the radical with the film deposition component injected from the injector to the film depositing substrate. |
