| 摘要 |
A semiconductor device (1) includes a substrate (10), a gate insulating film (20), and a gate electrode (30). The substrate (10) is made of a compound semiconductor, and has a recess (17), which opens at one main surface (10A) and has side wall surfaces (17A) when viewed in a cross section along a thickness direction. The gate insulating film is disposed on and in contact with each of the side wall surfaces (17A). The gate electrode (30) is disposed on and in contact with the gate insulating film (20). The substrate (10) includes a source region (15) having first conductivity type and disposed to be exposed at the side wall surface (17A); and a body region (14) having second conductivity type and disposed in contact with the source region (15) at a side opposite to the one main surface (10A) so as to be exposed at the side wall surface (17A), when viewed from the source region (15). The recess (17A) has a closed shape when viewed in a plan view. The side wall surfaces (17A) provide an outwardly projecting shape in every direction when viewed from an arbitrary location in the recess (17). In this way, there can be provided a semiconductor device (1) allowing for improved breakdown voltage. |
