| 摘要 |
A semiconductor light-emitting device comprising, at least, a substrate, a reflector that has a concave cavity, and an optical semiconductor element. Said semiconductor light-emitting device is characterized in that: the reflector is made from a resin composition that contains an inorganic substance; the ratio (P1/P2) of the intensity (P1) of the highest-intensity diffraction peak in the range of diffraction angles (2θ) from 0° to 24° in a spectrum obtained by measuring the reflector via X-ray diffractometry using Cu K-alpha radiation (the wavelength of which is 1.5418 Å) to the intensity (P2) of the highest-intensity diffraction peak in the range of diffraction angles (2θ) from 24° to 70° in said spectrum is between 0.01 and 1.0, inclusive; and the ash content of the reflector is at least 60% by mass. An optical-semiconductor-mounting substrate and a semiconductor light-emitting device provided with a reflector that exhibits extremely high reflectivity and excellent dimensional stability can be provided. |
