| 发明名称 | Vertical metal insulator metal capacitor | ||
| 摘要 | A capacitor structure includes at least two capacitors. A first electrode includes a bottom conductive plane and first vertical conductive structures. The bottom conductive plane is disposed over a substrate. The bottom conductive plane has a first area and a first shape. At least two second electrodes include top conductive planes and second vertical conductive structures. A combined area of the top conductive planes and a gap area between adjacent top conductive planes has a second area and a second shape. The first area and the second area are about the same and the first shape and the second shape are about the same. An insulating structure is disposed between the first electrode and the second electrodes. The first vertical conductive structures and the second vertical conductive structures are interlaced with each other. The capacitors share the bottom conductive plane and have separate top conductive planes. | ||
| 申请公布号 | US9343237(B2) | 申请公布日期 | 2016.05.17 |
| 申请号 | US201514600777 | 申请日期 | 2015.01.20 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 发明人 | Cho Lan-Chou;Jou Chewn-Pu |
| 分类号 | H01G4/30;H01G4/38;H01G4/005;H01L23/522;H01L49/02;H01L27/08 | 主分类号 | H01G4/30 |
| 代理机构 | Hauptman Ham, LLP | 代理人 | Hauptman Ham, LLP |
| 主权项 | 1. A capacitor structure including at least two capacitors, comprising: a first electrode including a bottom conductive plane and a plurality of first vertical conductive structures on the bottom conductive plane, the bottom conductive plane being disposed over a substrate, wherein the bottom conductive plane has a first area and a first shape; at least two second electrodes including at least two top conductive planes and a plurality of second vertical conductive structures under the at least two top conductive planes, wherein a combined area of the at least two top conductive planes and a gap area between adjacent top conductive planes of the at least two top conductive planes has a second area and a second shape, the first area and the second area are about the same and the first shape and the second shape are about the same; and an insulating structure between the first electrode and the at least two second electrodes, wherein the plurality of first vertical conductive structures and the plurality of second vertical conductive structures are interlaced with each other, and the at least two capacitors share the bottom conductive plane and have separate top conductive planes. | ||
| 地址 | TW | ||