| 发明名称 |
A NOVEL EMBEDDED 3D STRESS AND TEMPERATURE SENSOR UTILIZING SILICON DOPING MANIPULATION |
| 摘要 |
A new approach for building a stress-sensing rosette capable of extracting the six stress components and the temperature is provided, and its feasibility is verified both analytically and experimentally. The approach can include varying the doping concentration of the sensing elements and utilizing the unique behaviour of the shear piezoresistive coefficient (.pi.44) in n-Si. |
| 申请公布号 |
CA2806543(C) |
申请公布日期 |
2016.05.17 |
| 申请号 |
CA20112806543 |
申请日期 |
2011.11.24 |
| 申请人 |
THE GOVERNORS OF THE UNIVERSITY OF ALBERTA |
发明人 |
GHARIB, HOSSAM MOHAMED HAMDY;MOUSSA, WALIED AHMED MOHAMED |
| 分类号 |
G01L1/18;G01B7/16;G01L1/26 |
主分类号 |
G01L1/18 |
| 代理机构 |
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代理人 |
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