Nonvolatile memory devices, nonvolatile memory cells and methods of manufacturing nonvolatile memory devices

摘要

A nonvolatile memory cell includes first and second interlayer insulating films which are separated from each other and are stacked sequentially, a first electrode which penetrates the first interlayer insulating film and the second interlayer insulating film, a resistance change film which is formed along a side surface of the first electrode and extends parallel to the first electrode, and a second electrode which is formed between the first interlayer insulating film and the second interlayer insulating film. The second electrode includes a conductive film which is made of metal and a diffusion preventing film which prevents diffusion of a conductive material contained in the conductive film.

主权项

1. A nonvolatile memory cell, comprising:
a bit line, the bit line including a first surface opposite a second surface; a first interlayer insulating film; a second interlayer insulating film on the first interlayer film; a first electrode on the first surface of the bit line, the first electrode electrically connected to the bit line without a switch therebetween, the first electrode penetrating through the first interlayer insulating film and the second interlayer insulating film; a second electrode between the first interlayer insulating film and the second interlayer insulating film, the second electrode including a first conductive film and a first diffusion barrier film, the first diffusion barrier film configured as a diffusion barrier to a first conductive material contained in the first conductive film, the first conductive film including a first metal; and a resistance change film on a side surface of the first electrode and extending in parallel to the first electrode, the resistance change film directly contacting the side surface of the first electrode and a side surface of the second electrode that faces the side surface of the first electrode; and a bit line contact contacting the first surface of the bit line and a bottom of the first electrode, wherein the bit line contact is on the first surface of the bit line and under the bottom of the first electrode.