| 发明名称 |
Electro-optic PN junction modulator formed with a self-aligned process |
| 摘要 |
An electro-optic device, comprising a layer of light-carrying material; and a rib, projecting from the layer of light-carrying material, for guiding optical signals propagating through the device. The layer of light-carrying material comprises a first doped region of a first type extending into the rib, and a second doped region of a second, different type extending into the rib such that a pn junction is formed within the rib. The pn junction extends substantially parallel to at least two contiguous faces of the rib, resulting in a more efficient device. In addition, a self-aligned fabrication process can be used in order to simplify the fabrication process and increase reliability and yield. |
| 申请公布号 |
US9343638(B2) |
申请公布日期 |
2016.05.17 |
| 申请号 |
US201113578837 |
申请日期 |
2011.02.17 |
| 申请人 |
University of Southampton |
发明人 |
Gardes Frederic;Thomson David;Reed Graham |
| 分类号 |
G02F1/035;G02B6/12;H01L33/58;G02F1/35;G02F1/29;G02F1/025;G02F1/21;G02F1/015 |
主分类号 |
G02F1/035 |
| 代理机构 |
|
代理人 |
Reingand Nadya |
| 主权项 |
1. An electro-optic device, comprising:
a layer of light-carrying material; and a rib, projecting from the layer of light-carrying material, for guiding optical signals propagating through the device; wherein the layer of light-carrying material comprises a first doped region of a first type extending into the rib, and a second doped region of a second, different type extending into the rib such that a pn junction is formed within the rib, substantially parallel to at least three contiguous faces of the rib such that said junction forms a wrap-around π shape in cross-section. |
| 地址 |
Southampton GB |
