| 发明名称 | High voltage semiconductor devices including electric arc suppression material and methods of forming the same | ||
| 摘要 | A high voltage semiconductor device can include a high voltage semiconductor device package that includes a wall defining a recess within the high voltage semiconductor device package. A high voltage semiconductor chip can be in the recess and a high voltage electric arc suppression material can be in the recess. | ||
| 申请公布号 | US9343383(B2) | 申请公布日期 | 2016.05.17 |
| 申请号 | US201213410788 | 申请日期 | 2012.03.02 |
| 申请人 | Cree, Inc. | 发明人 | Mieczkowski Van |
| 分类号 | H01L23/047;H01L23/20;H01L23/22;H01L23/60;H01L23/00 | 主分类号 | H01L23/047 |
| 代理机构 | Myers Bigel & Sibley, P.A. | 代理人 | Myers Bigel & Sibley, P.A. |
| 主权项 | 1. A high voltage semiconductor device comprising: a high voltage semiconductor device package including a wall defining a recess within the high voltage semiconductor device package; a high voltage semiconductor chip in the recess; and a high voltage electric arc suppression material comprising SOF2, SO2F2, SF6, and/or S2F10 in the recess, wherein high voltage comprises at least about 600 Volts. | ||
| 地址 | Durham NC US | ||