发明名称 |
Method for fabricating semiconductor structure, and solid precursor delivery system |
摘要 |
A method for fabricating a semiconductor structure is provided, including: providing a solid precursor having a first average particle size; solving the solid precursor in an organic solvent into an intermediate; recrystallizing the intermediate to form solid granules, wherein the solid granules has a second average particle size larger than the first average particle size; vaporizing the solid granules to form a film-forming gas; and depositing the film-forming gas on a substrate to form a resistance film. A method for modifying a resistance film source in a semiconductor fabrication and a solid precursor delivery system are also provided. The method for fabricating a semiconductor structure in the present disclosure can remove small particles or ultra-small particles from solid precursor, and does not need extra time to dump cracked solid precursor. |
申请公布号 |
US9343315(B2) |
申请公布日期 |
2016.05.17 |
申请号 |
US201314092362 |
申请日期 |
2013.11.27 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
Cheng Chung-Liang;Tseng Chien-Hao;Chen Yen-Yu;Wu Ching-Chia;Lee Chang-Sheng;Zhang Wei |
分类号 |
H01L21/469;H01L21/28;C23C16/44;C23C16/448 |
主分类号 |
H01L21/469 |
代理机构 |
McDermott Will & Emery LLP |
代理人 |
McDermott Will & Emery LLP |
主权项 |
1. A method for fabricating a semiconductor structure, comprising:
providing a solid precursor having a first average particle size; solving the solid precursor in an organic solvent into an intermediate; recrystallizing the intermediate to form solid granules, wherein the solid granules have a second average particle size larger than the first average particle size; vaporizing the solid granules to form a film-forming gas; and depositing the film-forming gas on a substrate to form a resistance film. |
地址 |
Hsinchu TW |