Substrate treatment method

摘要

A substrate having a native oxide film formed on its surface is heated in a hydrogen atmosphere to reduce silicon dioxide to hydrogen. Additionally, silicon near an interface between the native oxide film and the substrate is hydrogen-terminated. A hydrogen-introduced layer containing silicon bonded with hydrogen is accordingly formed on the substrate surface. A dopant solution is supplied to the substrate surface having the hydrogen-introduced layer formed thereon, and hydrogen in the hydrogen-introduced layer is replaced with a dopant, thereby introducing the dopant into the substrate surface. A relatively large thickness of the hydrogen-introduced layer formed through the reduction of the native oxide film allows the dopant to be uniformly introduced into the substrate surface for a required depth. A flashing light is emitted to the substrate surface containing the introduced dopant, activating the dopant.

主权项

1. A substrate treatment method for introducing a dopant into a surface of a silicon substrate, the method comprising:
a hydrogen annealing step of heating a substrate having an oxide film formed on a surface thereof in a hydrogen-containing atmosphere with the oxide film remaining thereon to reduce said oxide film with hydrogen and hydrogen-terminate silicon at an interface between said oxide film and said substrate; and an introduction step of supplying a chemical solution containing a dopant to the surface of said substrate to introduce the dopant into said surface after said hydrogen annealing step.